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Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- Book:
- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
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- 27 April 2015, pp ix-xxx
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Phase and Morphology in Mixed CuO-WO3 Films for Chemical Sensing
- A. El Madi, B. Meulendyk, R. S. Pilling, G. Bernhardt, R. J. Lad, B. G. Frederick
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- Journal:
- MRS Online Proceedings Library Archive / Volume 751 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, Z3.48
- Print publication:
- 2002
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Semiconducting metal oxide (SMO) chemiresistive sensors are highly sensitive toward a broad range of hydrocarbons. To develop a gas phase sensor with selectivity toward organophosphorus compounds, such as chemical warfare agents and pesticides, we have developed dosimeters based upon a poisoning mechanism. Here, we report the growth and characterization of WO3 thin films, modified with Cu2O. XPS data show that exposure to phosphonate compounds leads to accumulation of phosphate on the surface, together with dramatic changes in the surface segregation of copper. We present XRD and XPS results to characterize the phase changes following growth, annealing, and exposure to phosphonate compounds. The correlation between sensor response and phosphorous accumulation shows that the highest activity occurs at intermediate coverages of Cu2O, in the15–25 Å range, on 500 Å WO3 films.
Diffraction studies of cubic phase stability in undoped zirconia thin films
- S. C. Moulzolf, R. J. Lad
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- Journal:
- Journal of Materials Research / Volume 15 / Issue 2 / February 2000
- Published online by Cambridge University Press:
- 31 January 2011, pp. 369-376
- Print publication:
- February 2000
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Pure stoichiometric ZrO2 films were deposited on amorphous silica substrates by electron beam evaporation of Zr in the presence of an electron cyclotron resonance oxygen plasma. Grain size, strain, and texture were analyzed by x-ray diffraction and reflection high-energy electron diffraction. Films grown at room temperature are polycrystalline and exist in the cubic phase. Growth at elevated temperatures produces coexisting cubic and monoclinic phases and shows a maximum critical grain size of ??~10 nm for stabilization of the cubic phase. Pole figure analysis indicates a preferred cubic [200] fiber axis for room-temperature growth and dual monoclinic {111} and in-plane textures for films grown at 400 °C. Postdeposition annealing experiments confirm the existence of a critical grain size and suggest mechanisms for grain growth.
Surface Morphology and Microstructure of Al-O Alloys Grown by ECR Plasma Deposition
- D. A. Marshall, J. C. Barbour, D. M. Follstaedt, A. J. Howard, R. J. Lad
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- Journal:
- MRS Online Proceedings Library Archive / Volume 403 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 235
- Print publication:
- 1995
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The growth of polycrystalline and amorphous aluminum-oxygen alloy films using electronbeam evaporation of Al in the presence of an O2 electron-cyclotron-resonance (ECR) plasma was investigated for film compositions varying from 40% Al (A12O3) to near 100% Al (A1Ox). Processing parameters such as deposition temperature and ion energy were varied to study their effects on surface texture and film microstructure. The Al-rich films (AlOx) contain polycrystalline fcc Al grains with finely dispersed second-phase particles of γ-A12O3 (1–2 nm in size). The surface roughness of these films was measured by atomic force microscopy and found to increase with sample bias and deposition temperature. Stoichiometric A12O3 films grown at 100°C and 400°C without an applied bias were amorphous, while an applied bias of -140 V formed a nanocrystalline γ-A12O3 film at 400°C. The surface roughness of the A12O3 increased with temperature while ion irradiation produced a smoother surface
Growth and Stability of MgO/NiO Multilayered Films on Single Crystal NiO(100)
- S. Imaduddin, R. J. Lad
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- Journal:
- MRS Online Proceedings Library Archive / Volume 401 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 507
- Print publication:
- 1995
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The less than 1% lattice mismatch between MgO and NiO makes them ideal candidates for investigating the growth and stability of multilayered oxide films. Ultra-thin multilayers composed of alternating films of MgO and NiO were deposited onto a stoichiometric NiO(100) single crystal substrate at 250°C by evaporating Mg and Ni in 5×10−7 Torr of O2, respectively. The structure of these multilayers was determined using LEED. Reactivity and chemical composition studies of the MgO/NiO interfaces were carried out using XPS and UPS. The MgO/NiO multilayers grow epitaxially on NiO(100), as evidenced by LEED. XPS and UPS analysis indicates attenuation of the NiO or MgO peaks during growth which is consistent with discrete layering. Chemical analysis also reveals negligible intermixing of the MgO and NiO layers during deposition. Results pertaining to the thermal stability of the multilayers show that UHV annealing above 750°C results in significant diffusion of MgO into the NiO(100) substrate.
Structure and Morphology of PD Overlayers on Epitaxial SNO2 Films Studied with the Atomic Force Microscope
- R. J. Lad, M. J. Matthews, M. D. Antonik, R. E. Cavicchi, S. Semancik
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- Journal:
- MRS Online Proceedings Library Archive / Volume 280 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 641
- Print publication:
- 1992
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The structure and morphology of clean and Pd-doped epitaxial SnO2 films were studied with the atomic force microscope (AFM). The SnO2 films were grown by reactive sputter deposition on three different substrates yielding epitaxial orientations: (101) SnO2 / r-cut sapphire, (100) SnO2 / basal sapphire, and (110) SnO2 / TiO2 (110). AFM imaging of monolayer amounts of Pd deposited onto the epitaxial SnO2 films shows that the Pd is dispersed at 300 K and forms clusters after annealing to 500 K in vacuum.
Electronic And Structural Properties Of Interfaces Created By Potassium Deposition ON TiO2 (110) Surfaces
- R. J. Lad, L. S. Dake
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- Journal:
- MRS Online Proceedings Library Archive / Volume 238 / 1991
- Published online by Cambridge University Press:
- 25 February 2011, 823
- Print publication:
- 1991
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Potassium was deposited onto stoichiometric TiO2 (110) surfaces and the chemical bonding and structure were studied with UPS, XPS, LEED, and RHEED. Potassium interacts strongly with the oxygen anions of the TiO2 and reduces the valency of Ti cations at the interface. At submonolayer potassium coverages, a large charge transfer to the substrate causes a sharp drop in work function, a population of electronic states within the bulk TiO2 band gap, and surface band bending. After large potassium doses at 300 K, multilayers of K2O are formed by diffusion of oxygen anions from the substrate, creating a substoichiometric TiO2−x interface composition. No metallic potassium is present even after large doses. The K2O layers remain stable after annealing as high as 900 K, and LEED indicates that they are disordered. RHEED characterization is limited by the roughness of the stoichiometric TiO2 (110) surface.
Facet Formation on Single Crystal TiO2 Surfaces Studied by Atomic Force Microscopy
- M. D. Antonik, J. C. Edwards, R. J. Lad
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- Journal:
- MRS Online Proceedings Library Archive / Volume 237 / 1991
- Published online by Cambridge University Press:
- 21 February 2011, 459
- Print publication:
- 1991
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Atomic force microscopy (AFM) and low energy electron diffraction (LEED) have been used to study the faceting behavior on (001) and (100) surfaces of a TiO2 single crystal. On the TiO2 (001) surface, LEED patterns characteristic of {011} facet planes develop after annealing below 900 °C in agreement with previous studies, but AFM shows a complex surface morphology consisting of a large distribution of facet sizes and orientations. After annealing at 1300 °C, facets do not form but rather a network of 5 – 30 nm high ridges develops over the entire surface. These ridges may be the result of surface defects produced by changes in bulk stoichiometry during annealing. On the TiO2 (100) surface, facets are also observed after annealing below 900 °C. However, these facets have extremely small height to width aspect ratios and are not discernible with LEED.